型号:

IRLHS6376TR2PBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 30V 3.4A DUAL PQFN
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
IRLHS6376TR2PBF PDF
特色产品 Dual PQFN 2x2 and Dual PQFN 3.3x3.3 Power MOSFETs
标准包装 400
系列 HEXFET®
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 3.6A
开态Rds(最大)@ Id, Vgs @ 25° C 63 毫欧 @ 3.4A,4.5V
Id 时的 Vgs(th)(最大) 1.1V @ 10µA
闸电荷(Qg) @ Vgs 2.8nC @ 4.5V
输入电容 (Ciss) @ Vds 270pF @ 25V
功率 - 最大 1.5W
安装类型 表面贴装
封装/外壳 6-VDFN 裸露焊盘
供应商设备封装 6-PQFN(2x2)
包装 带卷 (TR)
其它名称 IRLHS6376TR2PBF-ND
IRLHS6376TR2PBFTR
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